K4E661612D Datasheet, PDF(18/36 Page) Samsung semiconductor

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K4E661612D Datasheet, PDF (18/36 Pages) Samsung semiconductor – CMOS DRAM

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Industrial Temperature

K4E661612D,K4E641612D

UPPER BYTE WRITE CYCLE ( OE CONTROLLED WRITE )

NOTE : D OUT = O P E N

V IH -

RAS

V IL -

V IH -

UCAS

V IL -

V IH -

LCAS

V IL -

V IH -

V IL -

V IH -

V IL -

VIH -

VIL -

DQ0 ~ DQ7

V IH -

V IL -

DQ8 ~ DQ15

V IH -

V IL -

tC R P

tRC

tR A S

tR C D

tC S H

tR S H

tC A S

tASR

tR A D

tRAH

tASC

ROW

ADDRESS

tCAH

COLUMN

ADDRESS

tR A L

tCWL

tR W L

tW P

tOED

tOEH

tDS

tDH

DATA-IN

CMOS DRAM

tR P

tCRP

D o n â²t care

Undefined

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