K4E661612D Datasheet, PDF (33/36 Pages) Samsung semiconductor – CMOS DRAM

Industrial Temperature
K4E661612D,K4E641612D
HIDDEN REFRESH CYCLE ( READ )
CMOS DRAM
VIH -
RAS
VIL -
VIH -
UCAS
VIL -
VIH -
LCAS
VIL -
VIH -
A
VIL -
VIH -
W
VIL -
VIH -
OE
VIL -
DQ0 ~ DQ7
VOH -
VOL -
DQ8 ~ DQ15
VOH -
VOL -
tCRP
tRC
tR A S
tRP
tRC
tRP
tRAS
tRCD
tRSH
tCHR
tCRP
tRCD
tR S H
tR A D
tASR
tRAH tASC
ROW
ADDRESS
tCAH
COLUMN
ADDRESS
tRCS
tRAL
tA A
tOEA
OPEN
tCLZ
tRAC
tCAC
tOLZ
tCHR
tWRH
tW E Z
tOEZ
DATA-OUT
tCEZ
tREZ
OPEN
DATAD-IANTA-OUT
Don′t care
Undefined
* In Hidden refresh cycle of 64Mb A-die & B-die, when CAS signal transits from Low to High, the valid data may be cut off.