K4E661612D Datasheet, PDF (20/36 Pages) Samsung semiconductor – CMOS DRAM

Industrial Temperature
K4E661612D,K4E641612D
LOWER-BYTE READ - MODIFY - WRITE CYCLE
CMOS DRAM
VIH -
RAS
VIL -
VIH -
UCAS
VIL -
VIH -
LCAS
VIL -
VIH -
A
VIL -
VIH -
W
VIL -
VIH -
OE
VIL -
DQ0 ~ DQ7
VI/OH -
VI/OL -
DQ8 ~ DQ15
VOH -
VOL -
tCRP
tRAS
tRWC
tRP
tRPC
tCRP
tRCD
tR A D
tASR tRAH
ROW
ADDR.
tASC tCAH
COLUMN
ADDRESS
tRSH
tCAS
tC S H
tA W D
tCWD
tRWD
tOEA
tRWL
tCWL
tW P
tOLZ
tCLZ
tCAC
tAA
tRAC
tOED
tOEZ
VALID
DATA-OUT
tD S tDH
VALID
DATA-IN
OPEN
Don′t care
Undefined