306666-11 Datasheet, PDF (89/99 Pages) Numonyx B.V – Numonyx StrataFlash Embedded Memory

P30
Table 39: System Interface Information
Offset
1Bh
1Ch
1Dh
1Eh
1Fh
20h
21h
22h
23h
24h
25h
26h
Length
1
1
1
1
1
1
1
1
1
1
1
1
Description
Add.
V_CC logic supply minimum program/erase voltage
1B:
bits 0–3 BCD 100 mV
bits 4–7 BCD volts
V_CC logic supply maximum program/erase voltage
1C:
bits 0–3 BCD 100 mV
bits 4–7 BCD volts
V_PP [programming] supply minimum program/erase voltage
1D:
bits 0–3 BCD 100 mV
bits 4–7 HEX volts
V_PP [programming] supply maximum program/erase voltage
1E:
bits 0–3 BCD 100 mV
bits 4–7 HEX volts
“n” such that typical single word program time-out = 2ⁿ μ-sec
1F:
“n” such that typical max. buffer write time-out = 2ⁿ μ-sec
20:
“n” such that typical block erase time-out = 2ⁿ m-sec
21:
“n” such that typical full chip erase time-out = 2ⁿ m-sec
22:
“n” such that maximum word program time-out = 2ⁿ times typical ^23:
“n” such that maximum buffer write time-out = 2ⁿ times typical 24:
“n” such that maximum block erase time-out = 2ⁿ times typical 25:
“n” such that maximum chip erase time-out = 2ⁿ times typical
26:
Hex
Code Value
--17 1.7V
--20 2.0V
--85 8.5V
--95 9.5V
--08 256μs
--09 512μs
--0A 1s
--00 NA
--01 512μs
--01 1024μs
--02 4s
--00 NA
November 2007
Order Number: 306666-11
Datasheet
89