306666-11 Datasheet, PDF (48/99 Pages) Numonyx B.V – Numonyx StrataFlash Embedded Memory

P30
10.0 Read Operations
The device supports two read modes: asynchronous page mode and synchronous burst
mode. Asynchronous page mode is the default read mode after device power-up or a
reset. The Read Configuration Register must be configured to enable synchronous burst
reads of the flash memory array (see Section 10.3, “Read Configuration Register” on
page 49).
The device can be in any of four read states: Read Array, Read Identifier, Read Status
or Read Query. Upon power-up, or after a reset, the device defaults to Read Array. To
change the read state, the appropriate read command must be written to the device
(see Section 9.2, “Device Commands” on page 45). See Section 14.0, “Special Read
States” on page 69 for details regarding Read Status, Read ID, and CFI Query modes.
The following sections describe read-mode operations in detail.
10.1
Asynchronous Page-Mode Read
Following a device power-up or reset, asynchronous page mode is the default read
mode and the device is set to Read Array. However, to perform array reads after any
other device operation (e.g. write operation), the Read Array command must be issued
in order to read from the flash memory array.
Note: Asynchronous page-mode reads can only be performed when Read Configuration Register bit
RCR[15] is set (see Section 10.3, “Read Configuration Register” on page 49).
To perform an asynchronous page-mode read, an address is driven onto the Address
bus, and CE# and ADV# are asserted. WE# and RST# must already have been
deasserted. WAIT is deasserted during asynchronous page mode. ADV# can be driven
high to latch the address, or it must be held low throughout the read cycle. CLK is not
used for asynchronous page-mode reads, and is ignored. If only asynchronous reads
are to be performed, CLK should be tied to a valid V_IH level, WAIT signal can be floated
and ADV# must be tied to ground. Array data is driven onto DQ[15:0] after an initial
access time t_AVQV delay. (see Section 7.0, “AC Characteristics” on page 28).
In asynchronous page mode, four data words are “sensed” simultaneously from the flash
memory array and loaded into an internal page buffer. The buffer word corresponding
to the initial address on the Address bus is driven onto DQ[15:0] after the initial access
delay. The lowest two address bits determine which word of the 4-word page is output
from the data buffer at any given time.
10.2
Synchronous Burst-Mode Read
To perform a synchronous burst-read, an initial address is driven onto the Address bus, and
CE# and ADV# are asserted. WE# and RST# must already have been deasserted.
ADV# is asserted, and then deasserted to latch the address. Alternately, ADV# can
remain asserted throughout the burst access, in which case the address is latched on
the next valid CLK edge while ADV# is asserted.
During synchronous array and non-array read modes, the first word is output from the
data buffer on the next valid CLK edge after the initial access latency delay (see Section
10.3.2, “Latency Count” on page 50). Subsequent data is output on valid CLK edges
following a minimum delay. However, for a synchronous non-array read, the same word
of data will be output on successive clock edges until the burst length requirements are
satisfied. Refer to the following waveforms for more detailed information:
• Figure 17, “Synchronous Single-Word Array or Non-array Read Timing” on page 34
• Figure 18, “Continuous Burst Read, Showing An Output Delay Timing” on page 35
• Figure 19, “Synchronous Burst-Mode Four-Word Read Timing” on page 35
Datasheet
48
November 2007
Order Number: 306666-11