306666-11 Datasheet, PDF (27/99 Pages) Numonyx B.V – Numonyx StrataFlash Embedded Memory

P30
Table 12: DC Current Characteristics (Sheet 2 of 2)
Sym
Parameter
CMOS
Inputs
(V_CCQ =
1.7 V - 3.6
V)
TTL Inputs
(V_CCQ =
2.4 V - 3.6
V)
Unit
Test Conditions
Notes
Typ Max Typ Max
I_PPE V_PP Erase Current
0.05
8
0.10
22
0.05
8
0.10
22
V_PP = V_PPL, erase in progress
mA
V_PP = V_PPH, erase in progress
Notes:
1.
All currents are RMS unless noted. Typical values at typical V_CC, T_C = +25 °C.
2.
I_CCS is the average current measured over any 5 ms time interval 5 µs after CE# is deasserted.
3.
Sampled, not 100% tested.
4.
I_CCES is specified with the device deselected. If device is read while in erase suspend, current is I_CCES plus I_CCR.
5.
I_CCW, I_CCE measured over typical or max times specified in Section 7.5, “Program and Erase
Characteristics” on page 39.
6.2
DC Voltage Characteristics
Table 13: DC Voltage Characteristics
Sym
Parameter
CMOS Inputs
(VCCQ = 1.7 V – 3.6 V)
Min
Max
TTL Inputs ⁽¹⁾
(VCCQ = 2.4 V – 3.6 V)
Min
Max
Unit
Test Condition
V_IL
Input Low Voltage
0
0.4
0
0.6
V
V_IH
Input High Voltage
V_CCQ – 0.4 V
V_CCQ
2.0
V_CCQ
V
V_OL
Output Low Voltage
-
V_CC = V_CCMin
0.1
-
0.1
V V_CCQ = V_CCQMin
I_OL = 100 µA
V_OH
Output High Voltage
V_CCQ – 0.1
-
V_CCQ – 0.1
-
V_CC = V_CCMin
V V_CCQ = V_CCQMin
I_OH = –100 µA
V_PPLK V_PP Lock-Out Voltage
-
0.4
-
0.4
V
V_LKO V_CC Lock Voltage
1.0
-
1.0
-
V
V_LKOQ V_CCQ Lock Voltage
0.9
-
0.9
-
V
Notes:
1.
Synchronous read mode is not supported with TTL inputs.
2.
V_IL can undershoot to –0.4 V and V_IH can overshoot to V_CCQ + 0.4 V for durations of 20 ns or less.
3.
V_PP ≤ V_PPLK inhibits erase and program operations. Do not use V_PPL and V_{PPH outside their valid ranges.}
Notes
2
3
November 2007
Order Number: 306666-11
Datasheet
27