306666-11 Datasheet, PDF (26/99 Pages) Numonyx B.V – Numonyx StrataFlash Embedded Memory

P30
6.0
Electrical Specifications
6.1
DC Current Characteristics
Table 12: DC Current Characteristics (Sheet 1 of 2)
Sym
Parameter
CMOS
Inputs
(V_CCQ =
1.7 V - 3.6
V)
TTL Inputs
(V_CCQ =
2.4 V - 3.6
V)
Unit
Test Conditions
Notes
Typ
I_LI Input Load Current
-
Output
I_LO Leakage DQ[15:0], _WAIT
-
Current
64-Mbit
20
I_CCS,
I_CCD
V_CC Standby,
Power Down
128-Mbit 30
256-Mbit 55
512-Mbit 110
Asynchronous Single-
Word f = 5 MHz (1 CLK)
14
Page-Mode Read
9
f = 13 MHz (5 CLK)
13
Average
I_CCR
V_CC
Read
Current
Synchronous Burst
f = 40 MHz
15
17
21
16
Synchronous Burst
19
f = 52MHz
22
23
I_CCW, V_CC Program Current,
36
I_CCE V_CC Erase Current
26
64-Mbit
20
V_CC Program Suspend
I_CCWS, Current,
128-Mbit 30
I_CCES V_CC Erase
Suspend Current
256-Mbit 55
512-Mbit 110
I_PPS,
I_PPWS,
IPPES
I_PPR
V_PP Standby Current,
V_PP Program Suspend Current,
V_PP Erase Suspend Current
V_PP Read
I_PPW V_PP Program Current
0.2
2
0.05
8
Max
±1
±1
35
75
115
230
16
10
17
19
21
26
19
23
26
28
51
33
35
75
115
230
5
15
0.10
22
Typ
-
-
20
30
55
110
14
9
n/a
n/a
n/a
n/a
n/a
n/a
n/a
n/a
36
26
20
30
55
110
0.2
2
0.05
8
Max
±2
±10
35
75
200
400
16
10
n/a
n/a
n/a
n/a
n/a
n/a
n/a
n/a
51
33
35
75
200
400
5
15
0.10
22
V_CC = V_CCMax
µA V_CCQ = V_CCQMax
V_IN = V_CCQ or V_SS
V_CC = V_CCMax
µA V_CCQ = V_CCQMax
V_IN = V_CCQ or V_SS
V_CC = V_CCMax
V_CCQ = V_CCQMax
µA ^{CE# = VCCQ}
RST# = V_CCQ (for I_CCS)
RST# = V_SS (for I_CCD)
WP# = V_IH
mA 1-Word Read
mA 4-Word Read
mA BL = 4W
mA BL = 8W
mA BL = 16W
mA BL = Cont.
mA BL = 4W
V_CC = V_CCMax
CE# = V_IL
OE# = V_IH
Inputs: V_IL or
V_IH
mA BL = 8W
mA BL = 16W
mA BL = Cont.
V_PP = V_PPL, pgm/ers in progress
mA
V_PP = V_PPH, pgm/ers in progress
µA
CE# = V_CCQ; suspend in
progress
µA V_PP = V_PPL, suspend in progress
µA V_PP = V_PPL
V_PP = V_PPL, program in progress
mA
V_PP = V_PPH, program in progress
1
1,2
1
1,3,5
1,3,5
1,3,4
1,3
1,3
Datasheet
26
November 2007
Order Number: 306666-11