306666-11 Datasheet, PDF (6/99 Pages) Numonyx B.V – Numonyx StrataFlash Embedded Memory

P30
1.0
1.1
Introduction
This document provides information about the Numonyx™ StrataFlash^® Embedded
Memory (P30) product and describes its features, operation, and specifications.
The Numonyx™ StrataFlash^® Embedded Memory (P30) product is the latest generation
of Numonyx™ StrataFlash^® memory devices. Offered in 64-Mbit up through 512-Mbit
densities, the P30 device brings reliable, two-bit-per-cell storage technology to the
embedded flash market segment. Benefits include more density in less space, high-
speed interface, lowest cost-per-bit NOR device, and support for code and data
storage. Features include high-performance synchronous-burst read mode, fast
asynchronous access times, low power, flexible security options, and three industry
standard package choices. The P30 product family is manufactured using Intel^* 130 nm
ETOX™ VIII process technology.
The P30 product family is also planned on the Intel^* 65nm process lithography. 65nm
AC timing changes are noted in this datasheet, and should be taken into account for all
new designs.
Nomenclature
1.8 V:
3.0 V:
9.0 V:
V_CC (core) voltage range of 1.7 V – 2.0 V
V_CCQ (I/O) voltage range of 1.7 V – 3.6 V
V_PP voltage range of 8.5 V – 9.5 V
Block:
Main block:
Parameter block:
Top parameter device:
Bottom parameter device:
A group of bits, bytes, or words within the flash memory array that erase simultaneously
when the Erase command is issued to the device. The P30 has two block sizes: 32-KByte
and 128-KByte.
An array block that is usually used to store code and/or data. Main blocks are larger than
parameter blocks.
An array block that is usually used to store frequently changing data or small system
parameters that traditionally would be stored in EEPROM.
A device with its parameter blocks located at the highest physical address of its memory
map.
A device with its parameter blocks located at the lowest physical address of its memory
map.
1.2
Acronyms
BEFP:
CUI:
MLC:
OTP:
PLR:
PR:
RCR:
Buffer Enhanced Factory Programming
Command User Interface
Multi-Level Cell
One-Time Programmable
Protection Lock Register
Protection Register
Read Configuration Register
Datasheet
6
November 2007
Order Number: 306666-11