306666-11 Datasheet, PDF (39/99 Pages) Numonyx B.V – Numonyx StrataFlash Embedded Memory

P30
Figure 24: Write-to-Synchronous Read Timing
R 302
R301
R2
C LK
Address [A]
W5
W8
R 306
ADV#
R 104
R 106
W2
CE# [E}
W6
R 303
R11
WE# [W]
W18
W 19
W3
W 20
R4
OE# [G]
WAIT [T]
R 15
R 307
Data [D/Q]
W7
W4
D
R 304
R 305
R3
R304
Q
Q
W1
RST# [P]
Note: WAIT shown deasserted and High-Z per OE# deassertion during write operation (RCR[10]=0, Wait asserted low).
7.5
Program and Erase Characteristics
Table 20:
Num Symbol
W200
t_PROG/W
Program
Time
W200
W251
t_PROG/W
t_BUFF
Program
Time
W451
W452
t_BEFP/W
t_BEFP/Setup
Program
Parameter
V_PPL
Min Typ Max
Conventional Word Programming
Single word - 130nm
-
90 200
Single word - 65nm
-
125 150
Single cell
-
30
60
Buffered Programming
Single word
-
90 200
32-word buffer
-
440 880
Buffered Enhanced Factory Programming
Single word
n/a n/a n/a
BEFP Setup
n/a n/a n/a
Erasing and Suspending
Min
-
-
-
-
-
-
5
V_PPH
Typ
Max
Units
Notes
85 190
125 150 µs
1
30
60
85 190
µs
1
340 680
10
-
1,2
µs
-
-
1
November 2007
Order Number: 306666-11
Datasheet
39