306666-11 Datasheet, PDF (1/99 Pages) Numonyx B.V – Numonyx StrataFlash Embedded Memory

®
Numonyx™ StrataFlash Embedded Memory
(P30)
Product Features
Datasheet
„ High performance
„ Security
— 85 ns initial access
— One-Time Programmable Registers:
— 52 MHz with zero wait states, 17ns clock-to-data output
• 64 unique factory device identifier bits
synchronous-burst read mode
• 2112 user-programmable OTP bits
— 25 ns asynchronous-page read mode
— Selectable OTP Space in Main Array:
— 4-, 8-, 16-, and continuous-word burst mode
• Four pre-defined 128-KByte blocks (top or bottom
— Buffered Enhanced Factory Programming (BEFP) at 5 μs/
configuration)
byte (Typ)
• Up to Full Array OTP Lockout
— 1.8 V buffered programming at 7 μs/byte (Typ)
— Absolute write protection: V_PP = V_SS
„ Architecture
— Power-transition erase/program lockout
— Individual zero-latency block locking
— Multi-Level Cell Technology: Highest Density at Lowest
— Individual block lock-down
Cost
— Asymmetrically-blocked architecture
„ Software
— Four 32-KByte parameter blocks: top or bottom
— 20 μs (Typ) program suspend
configuration
— 20 μs (Typ) erase suspend
— 128-KByte main blocks
— Numonyx™ Flash Data Integrator optimized
„ Voltage and Power
— V_CC (core) voltage: 1.7 V – 2.0 V
— V_CCQ (I/O) voltage: 1.7 V – 3.6 V
— Standby current: 20μA (Typ) for 64-Mbit
— Basic Command Set and Extended Command Set
compatible
— Common Flash Interface capable
„ Density and Packaging
— 4-Word synchronous read current:
— 56- Lead TSOP package (64, 128, 256,
13 mA (Typ) at 40 MHz
512- Mbit)
„ Quality and Reliability
— 64- Ball Numonyx™ Easy BGA package (64,
— Operating temperature: –40 °C to +85 °C
128, 256, 512- Mbit)
— Minimum 100,000 erase cycles per block
— ETOX™ VIII process technology
— Numonyx™ QUAD+ SCSP (64, 128, 256,
512- Mbit)
— 16-bit wide data bus
Order Number: 306666-11
November 2007