306666-11 Datasheet, PDF (56/99 Pages) Numonyx B.V – Numonyx StrataFlash Embedded Memory

P30
11.0
11.1
Programming Operations
The device supports three programming methods: Word Programming (40h/10h),
Buffered Programming (E8h, D0h), and Buffered Enhanced Factory Programming (80h,
D0h). See
Section 9.0, “Device Operations” on page 43 for details on the various programming
commands issued to the device. The following sections describe device programming in
detail.
Successful programming requires the addressed block to be unlocked. If the block is
locked down, WP# must be deasserted and the block must be unlocked before
attempting to program the block. Attempting to program a locked block causes a
program error (SR[4] and SR[1] set) and termination of the operation. See Section
13.0, “Security Modes” on page 64 for details on locking and unlocking blocks.
The Product Name is segmented into multiple 8-Mbit Programming Regions. See
Section 4.4, “Memory Maps” on page 22 for complete addressing. Execute in Place
(XIP) applications must partition the memory such that code and data are in separate
programming regions. XIP is executing code directly from flash memory. Each
Programming Region should contain only code or data but not both. The following
terms define the difference between code and data. System designs must use these
definitions when partitioning their code and data for the P30 device.
• Code: Execution code ran out of the flash device on a continuous basis in the
system.
• Data: Information periodically programmed into the flash device and read back
(e.g. execution code shadowed and executed in RAM, pictures, log files, etc.).
Word Programming
Word programming operations are initiated by writing the Word Program Setup
command to the device (see Section 9.0, “Device Operations” on page 43). This is
followed by a second write to the device with the address and data to be programmed.
The device outputs Status Register data when read. See Figure 38, “Word Program
Flowchart” on page 79. V_PP must be above V_PPLK, and within the specified V_PPL min/
max values.
During programming, the Write State Machine (WSM) executes a sequence of
internally-timed events that program the desired data bits at the addressed location,
and verifies that the bits are sufficiently programmed. Programming the flash memory
array changes “ones” to “zeros”. Memory array bits that are zeros can be changed to
ones only by erasing the block (see Section 12.0, “Erase Operations” on page 62).
The Status Register can be examined for programming progress and errors by reading
at any address. The device remains in the Read Status Register state until another
command is written to the device.
Status Register bit SR[7] indicates the programming status while the sequence
executes. Commands that can be issued to the device during programming are
Program Suspend, Read Status Register, Read Device Identifier, CFI Query, and Read
Array (this returns unknown data).
When programming has finished, Status Register bit SR[4] (when set) indicates a
programming failure. If SR[3] is set, the WSM could not perform the word
programming operation because V_PP was outside of its acceptable limits. If SR[1] is set,
the word programming operation attempted to program a locked block, causing the
operation to abort.
Datasheet
56
November 2007
Order Number: 306666-11