MC68HC05F8 Datasheet, PDF (115/126 Pages) Motorola, Inc – High-density complementary metal oxide semiconductor(HCMOS) microcontroller unit

Freescale Semiconductor, Inc.
Table 13-2 DC Electrical Characteristics for 2.7V Operation
V_DD=2.7Vdc ±10%, V_SS=0Vdc, temperature range=0 to 70°C
CHARACTERISTICS
SYMBOL MINIMUM TYPICAL MAXIMUM UNIT
Output voltage
I_LOAD ≤ –10µA
I_LOAD ≤ +10µA
V_OH
V_DD-0.1
–
V_OL
–
–
Output high voltage (I_LOAD=1.6mA)
PA4-PA5, PB0-PB7, PC0-PC7, PD0-PD7,
V_OH
V_DD-0.3
–
TCMP, TNX
–
V
0.1
V
–
V
Output low voltage (I_LOAD=1.6mA)
PA4-PA5, PB0-PB7, PC0-PC7, PD0-PD7,
V_OL
–
–
0.3
V
TCMP, TNX
Input high voltage
PA0-PA5, PB0-PB7, PC0-PC7, PD0-PD7,
V_IH
0.7xV_DD
–
TCAP, IRQ1, IRQ2, RESET, OSC1
V_DD
V
Input low voltage
PA0-PA5, PB0-PB7, PC0-PC7, PD0-PD7,
V_IL
V_SS
–
0.2xV_DD
V
TCAP, IRQ1, IRQ2, RESET, OSC1
Data Retention Mode
Supply current
Run
Wait
Stop
V_RM
2.0
–
–
V
I_DD
–
1.5
TBD
mA
450
TBD
µA
360
TBD
nA
I/O ports high-Z leakage current
PA0-PA5, PB0-PB7, PC0-PC7, PD0-PD7
I_IL
–
–
±10
µA
Input current
TCAP, IRQ1, IRQ2, RESET, DECOIN,
I_IN
–
–
±1
µA
OSC1
Capacitance
ports (as input or output), RESET, IRQ1,
C_OUT
–
IRQ2, TCAP, OSC1
C_IN
–
Port C high current sinking capability
(for 1V saturation)
I_SK
–
–
12
pF
–
8
10
–
mA
13
MC68HC05F8
ELECTRICAL SPECIFICATIONS
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TPG
MOTOROLA
13-3