MRF89XAM8A-I Datasheet, PDF (99/140 Pages) Microchip Technology – Ultra Low-Power, Integrated ISM Band Sub-GHz Transceiver

MRF89XA
4.7 Bill of Materials
TABLE 4-3: MRF89XA APPLICATION SCHEMATIC BILL OF MATERIALS FOR 868 MHz
Designator Value
Description
Manufacturer
C1
0.047 μF Capacitor, Ceramic, 10V, +/-10%, X7R, SMT 0402 Murata Electronics North America
C2
0.22 μF Capacitor, Ceramic, 16V, +/-10%, X7R, SMT 0402 Murata Electronics North America
C3
1 μF Capacitor, Ceramic, 6.3V, +/-10%, X5R, SMT 0603 Murata Electronics North America
C4
22 pF Capacitor, Ceramic, 50V, +/-5%, UHI-Q NP0, SMT
0402
Johanson Technology
C5
1.8 pF Capacitor, Ceramic, 50V, +/-0.1 pF, UHI-Q NP0,
SMT 0402
Johanson Technology
C7
33 pF Capacitor, Ceramic, 50V, +/-5%, C0G, SMT 0402 Murata Electronics North America
C8
0.1 μF Capacitor, Ceramic, 16V, +/-10%, C0G, SMT 0402 Murata Electronics North America
C9
680 pF Capacitor, Ceramic, 50V, +/-5%, C0G, SMT 0402 Murata Electronics North America
C10
0.01 μF Capacitor, Ceramic, 16V, +/-10%, X7R, SMT 0402 Murata Electronics North America
C11
4.3 pF Capacitor, Ceramic, 50V, +/-0.1 pF, UHI-Q NP0,
SMT 0402
Johanson Technology
C12
1.5 pF Capacitor, Ceramic, 50V, +/-0.1 pF, UHI-Q NP0,
SMT 0402
Johanson Technology
FL1
TA0801A SAW Filter
Taisaw
L1
8.2 nH Inductor, Ceramic, +/-5%, SMT 0402
Johanson Technology
L2
100 nH Inductor, Ceramic, +/-5%, SMT 0402
Johanson Technology
L3
6.8 nH Inductor, Wirewound, +/-5%, SMT 0402
Johanson Technology
L4
6.8 nH Inductor, Wirewound, +/-5%, SMT 0402
Johanson Technology
L6
10 nH Inductor, Ceramic, +/-5%, SMT 0402
Johanson Technology
R1
1 ohm Resistor, 1%, +/-100 ppm/C, SMT 0402
Vishay/Dale
R2
100K ohm Resistor, 5%, +/-100 ppm/C, SMT 0402
Yageo
R3
6.8K ohm Resistor, 1%, +/-100 ppm/C, SMT 0402
Yageo
R4
0 ohm Resistor, SMT 0402
Yageo
R5
— Not Populated
—
U1
MRF89XA Transceiver
Microchip Technology Inc.
X1
12.800 Crystal, +/-10 ppm, 15 pF, ESR 100 ohms, SMT
—
MHz 5x3.2mm
Note:
For battery powered applications, a high
value capacitance should be implemented
in parallel with C1 (typically 10 μF) to offer
a low impedance voltage source during
startup sequences.
DS70622C-page 99
Preliminary
© 2010–2011 Microchip Technology Inc.