MRF89XAM8A-I Datasheet, PDF (104/140 Pages) Microchip Technology – Ultra Low-Power, Integrated ISM Band Sub-GHz Transceiver

MRF89XA
5.1 ESD Notice
The MRF49XA is a high-performance radio frequency
device, it satisfies:
• Class II of the JEDEC standard JESD22-A114-B
(Human Body Model) of 2 KV, except on all of the
RF pins where it satisfies Class 1A.
• Class III of the JEDEC standard JESD22-C101C
(Charged Device Model) on all pins.
It should thus be handled with all the necessary ESD
precautions to avoid any permanent damage.
TABLE 5-1: RECOMMENDED OPERATING CONDITIONS
Parameter
Min
Typ
Max
Unit
Ambient Operating Temperature
-40
—
+85
°C
Supply Voltage for RF, Analog and Digital Circuits
2.1
—
3.6
V
Supply Voltage for Digital I/O
2.1
—
3.6
V
Input High Voltage (VIH)
0.5 * VDD — VDD + 0.3 V
Input Low Voltage (VIL)
-0.3V
— 0.2 * VDD V
DC Voltage on Open Collector Outputs (RFIO)^(1,2) VDD – 1.5 — VDD + 1.5 V
AC Peak Voltage on Open Collector Outputs (IO)⁽¹⁾ VDD – 1.5 — VDD + 1.5 V
Note 1: At minimum, VDD – 1.5V should not be lower than 1.8V.
2: At maximum, VDD + 1.5V should not be higher than 3.7V.
Condition
—
—
—
—
—
—
—
TABLE 5-2: CURRENT CONSUMPTION⁽³⁾
Symbol
Chip Mode
Min
Typ
Max
Unit
Condition
IDDSL
IDDST
IDDFS
IDDTX
IDDRX
Note 1:
2:
3:
Sleep
Idle
—
0.1
2
µA Sleep clock disabled, all blocks
disabled
—
65
80
µA Oscillator and baseband enabled⁽²⁾
Frequency Synthesizer —
1.3
1.7
mA Frequency synthesizer running
TX
—
25
30
mA Output power = +10 dBm
—
16
21
mA Output power = +1 dBm⁽¹⁾
RX
—
3.0
3.5
mA
—
Guaranteed by design and characterization.
Crystal CLOAD = 10 pF, C0 = 2.5 pF, RM = 15Ω.
Measurement Conditions: Temp = 25°C, VDD = 3.3V, crystal frequency = 12.8 MHz, carrier
frequency = 868 or 915 MHz, modulation FSK, data rate = 25 kbps, f_dev = 50 kHz, f_c = 100 kHz, unless
otherwise specified.
DS70622C-page 104
Preliminary
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