MV78200 Datasheet, PDF (72/128 Pages) –

MV78200
Hardware Specifications
9.5.3
SDRAM DDR2 Interface DC Electrical Specifications
Table 35: SDRAM DDR2 Interface DC Electrical Specifications
Par am e te r
Input low level
Input high level
Output low level
Output high level
Rtt effective impedance value
Symbol Test Condition
VIL -
VIH -
VOL IOL = 13.4 mA
VOH IOH = -13.4 mA
RTT See note 2
Deviation of VM w ith respect to VDDQ/2
Input leakage current
Pin capacitance
dVm See note 3
IIL 0 < VIN < VDDIO
Cpin -
Min
Typ
Max Units Notes
-0.3
VREF - 0.125 V
-
VREF + 0.125
VDDIO + 0.3 V
-
0.28
V
-
1.42
V
-
120
150
180
ohm 1 , 2
60
75
90
ohm 1 , 2
40
50
60
ohm 1 , 2
-6
6
%
3
-10
10
uA 4, 5
5
pF -
Notes:
1. See SDRAM functional description section for ODT configuration.
2. Measurement definition for RTT: Apply VREF +/- 0.25 to input pin separately,
then measure current I(VREF +0.25) and I(VREF - 0.25) respectively.
RTT =
0.5
I − I _{(VREF + 0.25 )}
(VREF −0.25 )
3. Measurement definition for VM: Measured voltage (VM) at input pin (midpoint) w ith no load.
dVM = _⎜⎛ ^{2 × Vm} − 1_⎟⎞ × 100 %
⎝ ^VDDIO ⎠
4. While I/O is in High-Z.
5. This current does not include the current flow ing through the pullup/pulldow n resistor.
MV-S104671-U0 Rev. C
Page 72
Document Classification: Proprietary Information
Copyright © 2008 Marvell
December 6, 2008, Preliminary