VS28F016SV Datasheet, PDF (8/50 Pages) Intel Corporation – 16-Mbit (1-Mbit x 16, 2-Mbit x 8) FlashFileTM MEMORY

VS28F016SV MS28F016SV FlashFile^TM Memory
2 1 Lead Descriptions (Continued)
Symbol
Type
Name and Function
RY BY
OPEN DRAIN
OUTPUT
READY BUSY Indicates status of the internal WSM When low it indicates
that the WSM is busy performing an operation RY BY floating indicates
that the WSM is ready for new operations (or WSM has completed all
pending operations) or erase is suspended or the device is in deep power-
down mode This output is always active (i e not floated to tri-state off when
OE or CE₀ CE₁ are high) except if a RY BY Pin Disable command
is issued
WP
INPUT
WRITE PROTECT Erase blocks can be locked by writing a nonvolatile lock-
bit for each block When WP is low those locked blocks as reflected by
the Block-Lock Status bits (BSR 6) are protected from inadvertent data
writes or erases When WP is high all blocks can be written or erased
regardless of the state ot the lock-bits The WP input buffer is disabled
when RP transitions low (deep power-down mode)
BYTE
35
INPUT
INPUT
BYTE ENABLE BYTE low places device in x8 mode All data is then input
or output on DQ_0–7 and DQ_8–15 float Address A₀ selects between the high
and low byte BYTE high places the device in x16 mode and turns off the
A₀ input buffer Address A₁ then becomes the lowest order address
3 3 5 0 VOLT SELECT 3 5 high configures internal circuits for 3 3V
operation 3 5 low configures internal circuits for 5 0V operation
NOTE
Reading the array with 3 5 high in a 5 0V system could damage the
device Reference the power-up and reset timings (Section 5 7) for 3 5
switching delay to valid data
V_PP
SUPPLY
WRITE ERASE POWER SUPPLY (12 0V g0 6V 5 0V g0 5V) For erasing
memory array blocks or writing words bytes pages into the flash array V_PP
e _{5 0V} g_{0 5V eliminates the need for a 12V converter while connection to}
1 2 0V g0 6V maximizes Write Erase Performance
NOTE
Successful completion of write and erase attempts is inhibited with V_PP at or
below 1 5V Write and erase attempts with V_PP between 1 5V and 4 5V
between 5 5V and 11 4V and above 12 6V produce spurious results and
should not be attempted
V_CC
SUPPLY
DEVICE POWER SUPPLY (3 3V g0 45V 5 0V g0 5V 5 0 g0 25V) To
switch 3 3V to 5 0V (or vice versa) first ramp V_CC down to GND and then
power to the new V_CC voltage
Do not leave any power pins floating
GND
SUPPLY
GROUND FOR ALL INTERNAL CIRCUITRY Do not leave any ground pins
floating
NC
NO CONNECT Lead may be driven or left floating
8