VS28F016SV Datasheet, PDF (36/50 Pages) Intel Corporation – 16-Mbit (1-Mbit x 16, 2-Mbit x 8) FlashFileTM MEMORY

VS28F016SV MS28F016SV FlashFile^TM Memory
5 8 AC Characteristics for WE Controlled Command Write Operations⁽¹⁾
V_CC ^e 3 3V g0 15V T_CSE2 ^{e b}40 C to ^a125 C T_CSE1 ^{e b}55 C to ^a125 C Load ^e 50 pF
Sym
Versions
Parameter
Notes
Unit
Min
Max
t_AVAV
t_VPWH(1 ²⁾
t_PHEL
t_ELWL
t_AVWH
t_DVWH
t_WLWH
t_WHDX
t_WHAX
t_WHEH
t_WHWL
t_GHWL
t_WHRL
t_RHPL
Write Cycle Time
V_PP Setup to WE Going High
RP Setup to CE Going Low
CE Setup to WE Going Low
Address Setup to WE Going High
Data Setup to WE Going High
WE Pulse Width
Data Hold from WE High
Address Hold from WE High
CE Hold from WE High
WE Pulse Width High
Read Recovery before Write
WE High to RY BY Going Low
RP Hold from Valid Status Register (CSR
GSR BSR) Data and RY BY High
120
ns
3
100
ns
37
480
ns
37
10
ns
26
75
ns
26
75
ns
75
ns
2
10
ns
2
10
ns
37
10
ns
45
ns
3
0
ns
3
100
ns
3
0
ns
t_PHWL
RP High Recovery to WE Going Low
3
480
ns
t_WHGL
Write Recovery before Read
95
ns
t_QVVL(1 ²⁾
V_PP Hold from Valid Status Register (CSR
3
0
ms
GSR BSR) Data and RY BY High
t_WHQV(1)
t_WHQV(2)
Duration of Word Byte Write Operation
Duration of Block Erase Operation
3 4 5 11
5
ms
34
03
10
sec
36