VS28F016SV Datasheet, PDF (41/50 Pages) Intel Corporation – 16-Mbit (1-Mbit x 16, 2-Mbit x 8) FlashFileTM MEMORY

VS28F016SV MS28F016SV FlashFile^TM Memory
5 9 AC Characteristics for CE Controlled Command Write Operations⁽¹⁾
(Continued)
V_CC ^e 5 0V g0 25V T_CSE2 ^{e b}40 C to ^a125 C T_CSE1 ^{e b}55 C to ^a125 C Load ^e 30 pF
V_CC ^e 5 0V g0 5V T_CSE2 ^{e b}40 C to ^a125 C T_CSE1 ^{e b}55 C to ^a125 C Load ^e 100 pF
Sym
Versions⁽⁴⁾
Parameter
Notes
VS MS28F016SV-85
V_CC g5%
Min
Max
VS MS28F016SV-85
V_CC g10%
Min
Max
VS MS28F016SV-100
V_CC g10%
Unit
Min
Max
t_AVAV
Write Cycle
80
Time
85
100
ns
t_PHWL
RP Setup to
3
480
480
480
ns
WE Going
Low
t_VPEH(1 ²⁾ V_PP Setup to
37
100
100
100
ns
CE Going
High
t_WLEL
WE Setup to
37
0
0
0
ns
CE Going
Low
t_AVEH
Address Setup 2 6 7
50
50
50
ns
to CE Going
High
t_DVEH
Data Setup to 2 6 7
50
50
50
ns
CE Going
High
t_ELEH
CE Pulse
7
50
60
70
ns
Width
t_EHDX
Data Hold from 2 7
10
10
10
ns
CE High
t_EHAX
Address Hold
27
10
10
10
ns
from CE High
t_EHWH
WE Hold from
37
10
10
10
ns
CE High
t_EHEL
CE Pulse
7
30
30
30
ns
Width High
t_GHEL
Read Recovery
3
0
0
0
ns
before Write
t_EHRL
CE High to
37
100
100
100
ns
RY BY Going
Low
t_RHPL
RP Hold from
3
0
0
0
ns
Valid Status
Register
(CSR GSR
BSR) Data and
RY BY High
41