VS28F016SV Datasheet, PDF (40/50 Pages) Intel Corporation – 16-Mbit (1-Mbit x 16, 2-Mbit x 8) FlashFileTM MEMORY

VS28F016SV MS28F016SV FlashFile^TM Memory
5 9 AC Characteristics for CE Controlled Command Write Operations⁽¹⁾
V_CC ^e 3 3V g0 15V T_CSE2 ^{e b}40 C to ^a125 C T_CSE1 ^{e b}55 C to ^a125 C Load ^e 50 pF
Sym
Versions
Parameter
Notes
Unit
Min
Max
t_AVAV
t_PHWL
t_VPEH(1 ²⁾
t_WLEL
t_AVEH
t_DVEH
t_ELEH
t_EHDX
t_EHAX
t_EHWH
t_EHEL
t_GHEL
t_EHRL
t_RHPL
Write Cycle Time
RP Setup to WE Going Low
V_PP Setup to CE Going High
WE Setup to CE Going Low
Address Setup to CE Going High
Data Setup to CE Going High
CE Pulse Width
Data Hold from CE High
Address Hold from CE High
WE hold from CE High
CE Pulse Width High
Read Recovery before Write
CE High to RY BY Going Low
RP Hold from Valid Status Register (CSR
GSR BSR) Data and RY BY High
120
ns
3
480
ns
37
100
ns
37
0
ns
267
75
ns
267
75
ns
7
75
ns
27
10
ns
27
10
ns
3
10
ns
7
45
ns
3
0
ns
37
100
ns
3
0
ns
t_PHEL
RP High Recovery to CE Going Low
37
480
ns
t_EHGL
Write Recovery before Read
95
ns
t_QVVL(1 ²⁾
V_PP Hold from Valid Status Register (CSR
3
0
ms
GSR BSR) Data and RY BY High
t_EHQV(1)
t_EHQV(2)
Duration of Word Byte Write Operation
Duration of Block Erase Operation
3 4 5 11
5
ms
4
03
10
sec
40