VS28F016SV Datasheet, PDF (26/50 Pages) Intel Corporation – 16-Mbit (1-Mbit x 16, 2-Mbit x 8) FlashFileTM MEMORY

VS28F016SV MS28F016SV FlashFile^TM Memory
5 4 DC Characteristics (Continued)
V_CC ^e 3 3V g0 3V T_CSE2 ^{e b}40 C to ^a125 C T_CSE1 ^{e b}55 C to ^a125 C
Sym
Parameter
Notes Min
Max Units
Test Conditions
I_CCW
V_CC Write Current
16
I_CCE
V_CC Block Erase
16
Current
I_CCES V_CC Erase
12
Suspend Current
12
mA
Word Byte Write in Progress
V_PP ^e 12 0V g5%
17
mA
Word Byte Write in Progress
V_PP ^e 5 0V g10%
12
mA
Block Erase in Progress
V_PP ^e 12 0V g5%
17
mA
Block Erase in Progress
V_PP ^e 5 0V g10%
6
mA
CE₀ CE₁ ^e V_IH
Block Erase Suspended
I_PPS
V_PP Standby Read
1
I_PPR
Current
I_PPD
V_PP Deep Power-
1
Down Current
g100
mA
V_PP ^s V_CC
200
mA
V_PP ^l V_CC
50
mA
RP ^e GND g0 2V
I_PPW
V_PP Write Current
1
15
mA
V_PP ^e 12 0V g5%
Word Byte Write in Progress
25
mA
V_PP ^e 5 0V g10%
Word Byte Write in Progress
I_PPE
V_PP Erase Current
1
10
mA
V_PP ^e 12 0V g5%
Block Erase in Progress
20
mA
V_PP ^e 5 0V g10%
Block Erase in Progress
I_PPES V_PP Erase
1
Suspend Current
200
mA
V_PP ^e V_{PPH1 or} V_PPH2
Block Erase Suspended
V_IL
Input Low Voltage
V_IH
Input High Voltage
b_{0 3}
08
V
V_CC
20
a
V
03
V_OL
Output Low
Voltage
04
V
V_CC ^e V_CC Min and
I_OL^e 4 mA
26