VS28F016SV Datasheet, PDF (38/50 Pages) Intel Corporation – 16-Mbit (1-Mbit x 16, 2-Mbit x 8) FlashFileTM MEMORY

VS28F016SV MS28F016SV FlashFile^TM Memory
5 8 AC Characteristics for WE Controlled Command Write Operations⁽¹⁾
V_CC ^e 5 0V g0 25V T_CSE2 ^{e b}40 C to ^a125 C T_CSE1 ^{e b}55 C to ^a125 C Load ^e 30 pF
V_CC ^e 5 0V g0 5V T_CSE2 ^{e b}40 C to ^a125 C T_CSE1 ^{e b}55 C to ^a125 C Load ^e 100 pF
(Continued)
Sym
Versions
Parameter
Notes
VS MS28F016SV-85
V_CC g5%
Min
Max
VS MS28F016SV-85
V_CC g10%
Min
Max
VS MS28F016SV-100
V_CC g10%
Unit
Min
Max
t_PHWL
RP High
3
1
1
Recovery to
WE Going
Low
1
ms
t_WHGL
Write
60
65
70
Recovery
before Read
t_QVVL(1) V_PP Hold
3
0
0
0
t_QVVL(2) from Valid
Status
Register
(CSR GSR
BSR) Data
and RY
BY High
t_WHQV(1) Duration of 3 4 5 11
45
45
45
Word Byte
Write
Operation
t_WHQV(2) Duration of
34
03
10
03
10
03
Block Erase
Operation
ns
ms
ms
10
sec
NOTES
1 Read timings during write and erase are the same as for normal read
2 Refer to command definition tables for valid address and data values
3 Sampled not 100% tested Guaranteed by design
4 Write Erase durations are measured to valid Status Register (CSR) Data V_PP e 12 0V g0 6V
5 Word Byte Write operations are typically performed with 1 Programming Pulse
6 Address and Data are latched on the rising edge of WE for all Command Write operations
7 CE_x is defined as the latter of CE₀ or CE₁ going low or the first of CE₀ or CE₁ going high
8 Device speeds are defined as
80 85 100 ns at V_CC e 5 0V equivalent to
120 ns at V_CC e 3 3V
9 See the high speed AC Input Output Reference Waveforms and AC Testing Load Circuit
10 See the standard AC Input Output Reference Waveforms and AC Testing Load Circuit
11 The TBD information will be available in a technical paper Please contact Intel’s Application Hotline or your local sales
office for more information
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