English
Language : 

VS28F016SV Datasheet, PDF (30/50 Pages) Intel Corporation – 16-Mbit (1-Mbit x 16, 2-Mbit x 8) FlashFileTM MEMORY
◁
VS28F016SV MS28F016SV FlashFileTM Memory
5 5 DC Characteristics (Continued)
VCC e 5 0V g 0 5V 5 0V g 0 25V TCSE2 e b40 C to a125 C TCSE1 e b55 C to a125 C
Sym
Parameter
Notes
Min
Max
Units
Test Conditions
VOL
Output Low
6
Voltage
0 45
V
VCCe VCC Min
IOLe 5 8 mA
VOH1
Output High
Voltage
6
0 85
VCC
V
IOHe b2 5 mA
VCC e VCC Min
VOH2
6
VCC
b0 4
IOHe b100 mA
VCCe VCC Min
VPPLK
VPP Write Erase
36
00
18
V
Lock Voltage
VPPH1
VPP during
Write Erase
Operations
45
55
V
VPPH2
VPP during
Write Erase
Operations
11 4
12 6
V
VLKO
VCC Write Erase
18
V
Lock Voltage
NOTES
1 All currents are in RMS unless otherwise noted These currents are valid for all product versions (package and speeds)
2 ICCES is specified with the device de-selected If the device is read while in erase suspend mode current draw is the sum
of ICCESand ICCR
3 Block Erases Word Byte Writes and Lock Block operations are inhibited when VPP s VPPLK and not guaranteed in the
ranges between VPPLK(max) and VPPH1(min) between VPPH1(max) and VPPH2(min) and above VPPH2(max)
4 Automatic Power Saving (APS) reduces ICCR to less than 1 mA in Static operation
5 CMOS Inputs are either VCC g0 2V or GND g0 2V TTL Inputs are either VIL or VIH
6 Sampled not 100% tested Guaranteed by design
30
 ▷