VS28F016SV Datasheet, PDF (46/50 Pages) Intel Corporation – 16-Mbit (1-Mbit x 16, 2-Mbit x 8) FlashFileTM MEMORY

VS28F016SV MS28F016SV FlashFile^TM Memory
5 11 AC Characteristics for CE Controlled Page Buffer Write Operations⁽¹⁾
V_CC ^e 3 3V g0 3V T_CSE2 ^{e b}40 C to ^a125 C T_CSE1 ^{e b}55 C to ^a125 C Load ^e 50 pF
Sym
Versions
Parameter
28F016SV-120
Unit
Notes
Min
Typ
Max
t_AVEL
Address Setup to CE Going Low
23
25
ns
V_CC ^e 5 0V g0 5V T_CSE2 ^{e b}40 C to ^a125 C T_CSE1 ^{e b}55 C to ^a125 C Load ^e 50 pF
Versions⁽⁴⁾
Sym
Parameter
V_CC g5%
V_CC g10%
Notes
28F016SV-080⁽⁵⁾
28F016SV-080⁽⁶⁾
Min Typ Max
28F016SV-085⁽⁶⁾
Min Typ Max
t_AVEL Address Setup
23
15
15
to CE Going Low
NOTES
1 All other specifications for CE Controlled Write Operations can be found in section 5 9
2 Address must be valid during the entire CE low pulse
3 CEx is defined as the latter of CE₀ or CE₁ going low or the first of CE₀ or CE₁ going high
4 Device speeds are defined as
80 85 100 ns at V_CC e 5 0V equivalent to
120 ns at V_CC e 3 3V
5 See the high speed AC Input Output Reference Waveforms and AC Testing Load Circuit
6 See the standard AC Input Output Reference Waveforms and AC Testing Load Circuit
Unit
ns
NOTE
1 CEx is defined as the latter of CE₀ or CE₁ going low or the first of CE₀ or CE₁ going high
Figure 17 Controller Page Buffer Write Timing Waveforms
(Loading Data to the Page Buffer)
271312 – 26
46