VS28F016SV Datasheet, PDF (37/50 Pages) Intel Corporation – 16-Mbit (1-Mbit x 16, 2-Mbit x 8) FlashFileTM MEMORY

VS28F016SV MS28F016SV FlashFile^TM Memory
5 8 AC Characteristics for WE Controlled Command Write Operations⁽¹⁾
(Continued)
V_CC ^e 5 0V g0 25V T_CSE2 ^{e b}40 C to ^a125 C T_CSE1 ^{e b}55 C to ^a125 C Load ^e 30 pF
V_CC ^e 5 0V g0 5V T_CSE2 ^{e b}40 C to ^a125 C T_CSE1 ^{e b}55 C to ^a125 C Load ^e 100 pF
Sym
Versions
Parameter
Notes
VS MS28F016SV-85
V_CC g5%
Min
Max
VS MS28F016SV-85
V_CC g10%
Min
Max
VS MS28F016SV-100
V_CC g10%
Unit
Min
Max
t_AVAV
Write Cycle
80
85
100
ns
Time
t_VPWH(1) V_PP Setup to
3
100
100
t_VPWH(2) WE Going
High
100
ns
t_PHEL
RP Setup to 3 7
480
480
CE Going
Low
480
ns
t_ELWL
CE Setup to 3 7
0
0
WE Going
Low
0
ns
t_AVWH Address
26
50
50
Setup to
WE Going
High
50
ns
t_DVWH Data Setup to 2 6
50
50
WE Going
High
50
ns
t_WLWH WE Pulse
50
60
Width
70
ns
t_WHDX Data Hold
2
10
10
from WE
High
10
ns
t_WHAX Address Hold
2
10
10
from WE
High
10
ns
t_WHEH CE Hold
37
10
10
from WE
High
10
ns
t_WHWL WE Pulse
30
30
Width High
30
ns
t_GHWL Read
3
0
0
Recovery
before Write
0
ns
t_WHRL WE High to
3
100
100
RY BY
Going Low
100
ns
t_RHPL
RP Hold
3
0
0
from Valid
Status
Register
(CSR GSR
BSR) Data
and RY BY
High
0
ns
37