VS28F016SV Datasheet, PDF (44/50 Pages) Intel Corporation – 16-Mbit (1-Mbit x 16, 2-Mbit x 8) FlashFileTM MEMORY

VS28F016SV MS28F016SV FlashFile^TM Memory
5 10 AC Characteristics for WE Controlled Page Buffer Write Operations⁽¹⁾
V_CC ^e 3 3V g0 3V T_CSE2 ^{e b}40 C to ^a125 C T_CSE1 ^{e b}55 C to ^a125 C Load ^e 50 pF
Sym
Versions
Parameter
28F016SV-120
Unit
Notes
Min
Typ
Max
t_AVWL
Address Setup to WE Going Low
2
25
ns
V_CC ^e 5 0V g0 5V T_CSE2 ^{e b}40 C to ^a125 C T_CSE1 ^{e b}55 C to ^a125 C Load ^e 50 pF
Versions⁽³⁾
Sym
Parameter
V_CC g5%
V_CC g10%
Notes
28F016SV-080⁽⁴⁾
28F016SV-080⁽⁵⁾
Min Typ Max
28F016SV-085⁽⁵⁾
Min Typ Max
t_AVWL Address Setup
2
15
15
to WE Going Low
NOTES
1 All other specifications for WE Controlled Write Operations can be found in section 5 8
2 Address must be valid during the entire WE low pulse
3 Device speeds are defined as
80 85 100 ns at V_CC e 5 0V equivalent to
120 ns at V_CC e 3 3V
4 See the high speed AC Input Output Reference Waveforms and AC Testing Load Circuit
5 See the standard AC Input Output Reference Waveforms and AC Testing Load Circuit
Unit
ns
44