VS28F016SV Datasheet, PDF (48/50 Pages) Intel Corporation – 16-Mbit (1-Mbit x 16, 2-Mbit x 8) FlashFileTM MEMORY

VS28F016SV MS28F016SV FlashFile^TM Memory
5 12 Erase and Word Byte Write Performance^{(3 5)} (Continued)
V_CC ^e 5 0V V_PP ^e 5 0V g0 5V T_CSE2 ^{e b}40 C to ^a125 C T_CSE1 ^{e b}55 C to ^a125 C
Sym
Parameter
Notes
Typ⁽¹⁾
Units
Test Conditions
Page Buffer Byte Write Time
267
8
ms
Page Buffer Word Write Time
267
16
ms
t_WHRH1A
t_WHRH1B
t_WHRH(2)
t_WHRH(3)
Byte Write Time
Word Write Time
Block Write Time
Block Write Time
Block Erase Time
27
20
ms
27
25
ms
27
14
sec
Byte Write Mode
27
0 85
sec
Word Write Mode
27
10
sec
Full Chip Erase Time
27
32 0
sec
Erase Suspend Latency Time
4
to Read
9
ms
Auto Erase Suspend Latency
Time to Write
12
ms
V_CC ^e 5 0V g 0 5V V_PP ^e 12 0V g0 6V T_CSE2 ^{e b}40 C to ^a125 C T_CSE1 ^{e b}55 C to ^a125 C
Sym
Parameter
Notes
Typ⁽¹⁾
Units
Test Conditions
Page Buffer Byte Write Time
267
21
ms
Page Buffer Word Write Time
267
41
ms
t_WHRH(1)
t_WHRH(2)
t_WHRH(3)
Word Byte Write Time
Block Write Time
Block Write Time
Block Erase Time
27
6
ms
27
04
sec
Byte Write Mode
27
02
sec
Word Write Mode
2
06
sec
Full Chip Erase Time
27
19 2
sec
Erase Suspend Latency Time
4
to Read
7
ms
Auto Erase Suspend Latency
Time to Write
10
ms
NOTES
1 25 C and normal voltages
2 Excludes system-level overhead
3 These performance numbers are valid for all speed versions
4 Specification applies to interrupt latency for single block erase Suspend latency for erase all unlocked blocks operation
extends the maximum latency time to 270 ms
5 Sampled but not 100% tested Guaranteed by design
6 Assumes using the full Page Buffer to Write to Flash (256 bytes or 128 words)
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