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VS28F016SV Datasheet, PDF (27/50 Pages) Intel Corporation – 16-Mbit (1-Mbit x 16, 2-Mbit x 8) FlashFileTM MEMORY
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VS28F016SV MS28F016SV FlashFileTM Memory
5 4 DC Characteristics (Continued)
VCC e 3 3V g0 15V TCSE2 e b40 C to a125 C TCSE1 e b55 C to a125 C
Sym
Parameter
Notes
Min
Max
Units
VOH1
Output High
Voltage
24
V
VOH2
VCCb0 2
V
VPPLK
VPP Erase Write
3
Lock Voltage
VPPH1
VPP during
3
Write Erase
Operations
VPPH2
VPP during
3
Write Erase
Operations
VLKO
VCC Erase Write
Lock Voltage
00
18
V
45
55
V
11 4
12 6
V
18
V
Test Conditions
IOHe b2 0 mA
VCC e VCC Min
IOH e b100 mA
VCC e VCC Min
NOTES
1 All currents are in RMS unless otherwise noted These currents are valid for all product versions (package and speeds)
2 ICCES is specified with the device de-selected If the device is read while in erase suspend mode current draw is the sum
of ICCES and ICCR
3 Block Erases Word Byte Writes and Lock Block operations are inhibited when VPP s VPPLK and not guaranteed in the
ranges between VPPLK(max) and VPPH1(min) between VPPH1(max) and VPPH2(min) and above VPPH2(max)
4 Automatic Power Savings (APS) reduces ICCR to less than 3 mA in static operation
5 CMOS Inputs are either VCC g0 2V or GND g0 2V TTL Inputs are either VIL or VIH
6 Sampled but not 100% tested Guaranteed by design
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