HYB25L512160AC Datasheet, PDF (46/50 Pages) Infineon Technologies AG – 512MBit Mobile-RAM

HYB25L512160AC–7.5
512MBit Mobile-RAM
Electrical Characteristics
4.3
Pin Capacitances
Table 19 Pin Capacitances¹⁾²⁾
Parameter
Symbol
Values
Unit
min.
max.
Input capacitance: CLK
Input capacitance: CS0, CS1
Input capacitance: all other input pins
Input/Output capacitance: DQ
C_I1
5.0
C_I2
3.0
C_I3
5.0
C_IO
7.0
7.0
pF
5.0
pF
7.0
pF
10.0
pF
1) These values are not subject to production test but verified by device characterization.
2) Input capacitance is measured according to JEP147 with VDD, VDDQ applied and all other pins (except the pin under test)
floating. DQ’s should be in high impedance state. This may be achieved by pulling CKE to low level.
Data Sheet
46
Rev. 1.3, 2004-04
10212003-BSPE-77OL