HYB25L512160AC Datasheet, PDF (39/50 Pages) Infineon Technologies AG – 512MBit Mobile-RAM

HYB25L512160AC–7.5
512MBit Mobile-RAM
Functional Description
CLK
t_RP
t_RC
Command PRE
NOP
ARF
NOP
Address
A10 (AP)
DQ
Pre All
High-Z
Ba A, Row n = bank A, row n
Figure 45 AUTO REFRESH
3.4.9.2 SELF REFRESH
CLK
CKE
CS
RAS
CAS
WE
A0-A12
BA0,BA1
= Don't Care
Figure 46 SELF REFRESH Entry Command
NOP
ARF
t_RC
NOP
NOP
ACT
Ba A,
Row n
Row n
= Don't Care
The SELF REFRESH command can be used to retain
data in the Mobile-RAM, even if the rest of the system
is powered down. When in the SELF REFRESH
mode, the Mobile-RAM retains data without external
clocking. The SELF REFRESH command is initiated
like an AUTO REFRESH command except CKE is
LOW. Input signals except CKE and CLK are “Don’t
Care” during SELF REFRESH. CLK pin may not float.
The SELF REFRESH command may be issued to
both chips at the same time (CS0 = CS1 = 0).
The procedure for exiting SELF REFRESH requires a
stable clock prior to CKE returning HIGH. Once CKE
is HIGH, NOP commands must be issued for t_RC
because time is required for a completion of any
internal refresh in progress.
The use of SELF REFRESH mode introduces the
possibility that an internally timed event can be
missed when CKE is raised for exit from SELF
REFRESH mode. Upon exit from SELF REFRESH an
extra AUTO REFRESH command is recommended.
Data Sheet
39
Rev. 1.3, 2004-04
10212003-BSPE-77OL