HYB25L512160AC Datasheet, PDF (19/50 Pages) Infineon Technologies AG – 512MBit Mobile-RAM

HYB25L512160AC–7.5
512MBit Mobile-RAM
Functional Description
Due to shared command, CLK and CKE pins of this stacked configuration, commands issued to one chip
may also impact the state of the second chip, even if that chip is actually deselected. Details can be found
in the command descriptions below.
Table 7 Inputs Timing Parameters
Parameter
Clock cycle time
V_DDQ = 2.3V .. 3.6V
V_DDQ = 1.65V .. 1.95V
Clock frequency
V_DDQ = 2.3V .. 3.6V
V_DDQ = 1.65V .. 1.95V
Clock high-level width
Clock low-level width
Address, data and command input setup time
Address, data and command input hold time
3.4.1 No Operation (NOP)
CLK
CKE
CS
RAS
CAS
WE
A0-A12
BA0,BA1
(High)
= Don't Care
Figure 9 No Operation Command
CL = 3
CL = 2
CL = 2 or 3
CL = 3
CL = 2 or 3
Symbol
t_CK
f_CK
f_CK
t_CH
t_CL
t_IS
t_IH
–7.5
min
7.5
9.5
9.5
—
—
2.5
2.5
1.5
0.8
max
—
—
—
133
105
—
—
—
—
Unit
ns
ns
ns
MHz
MHz
ns
ns
ns
ns
Notes
—
—
—
—
The NO OPERATION (NOP) command is used to
perform a NOP to a Mobile-RAM which is selected
(CS = LOW). This prevents unwanted commands
from being registered during idle states. Operations
already in progress are not affected.
3.4.2 DESELECT
The DESELECT function (CS = HIGH) prevents new commands from being executed by the Mobile-RAM. The
Mobile-RAM is effectively deselected. Operations already in progress are not affected.
When issuing an access command to one chip of this stacked configuration, the other chip shall be
deselected by asserting its corresponding CS pin HIGH.
Data Sheet
19
Rev. 1.3, 2004-04
10212003-BSPE-77OL