HYB25L512160AC Datasheet, PDF (25/50 Pages) Infineon Technologies AG – 512MBit Mobile-RAM

HYB25L512160AC–7.5
512MBit Mobile-RAM
Functional Description
CLK
Command READ
Address
Ba A,
Col n
DQ
DQ
READ
READ
READ
NOP
NOP
NOP
NOP
NOP
Ba A,
Col a
CL=2
Ba A,
Col x
Ba A,
Col m
DO n
DO a
DO x
DO m DO m+1 DO m+2 DO m+3
CL=3
DO n
DO a
DO x
DO m DO m+1 DO m+2
Ba A, Col n etc. = Bank A, Column n etc.
DO n etc. = Data Out from column n etc.
Burst Length = 4 in the case shown; bursts are terminated by consecutive READ commands
3 subsequent elements of Data Out are provided in the programmed order following DO m.
Figure 19 Random READ Bursts
Non-consecutive READ bursts are shown in Figure 20.
= Don't Care
CLK
Command READ
Address
Ba A,
Col n
DQ
DQ
NOP
NOP
NOP
NOP
READ
NOP
NOP
NOP
CL=2
Ba A,
Col b
DO n
DO n+1 DO n+2 DO n+3
DO b
DO b+1
CL=3
DO n
DO n+1 DO n+2 DO n+3
DO b
Ba A, Col n (b) = Bank A, Column n (b)
DO n (b) = Data Out from column n (b)
Burst Length = 4 in the case shown.
3 subsequent elements of Data Out are provided in the programmed order following DO n (b).
Figure 20 Non-Consecutive READ Bursts
= Don't Care
Data Sheet
25
Rev. 1.3, 2004-04
10212003-BSPE-77OL