HYB25L512160AC Datasheet, PDF (41/50 Pages) Infineon Technologies AG – 512MBit Mobile-RAM

HYB25L512160AC–7.5
512MBit Mobile-RAM
Functional Description
CLK
CKE
Command PRE
Address
A10 (AP) Pre All
DQ
t_RP
NOP
NOP
High-Z
NOP
Valid
Valid
Valid
Power Down
Entry
Exit from
Any
Power Down Command
Precharge Power Down mode shown: all banks are idle and tRP met
when Power Down Entry Command is issued
= Don't Care
Figure 49 POWER DOWN Entry and Exit
3.4.10.1 DEEP POWER DOWN
The deep power down mode is an unique function on Low Power SDRAM devices with extremly low current
consumption. Deep power down mode is entered using the BURST TERMINATE command (cf. Figure 38) except
that CKE is LOW. All internal voltage generators inside the device are stopped and all memory data is lost in this
mode. To enter the deep power down mode all banks must be precharged.
The deep power down mode is asynchronously exited by asserting CKE HIGH. After the exit, the same command
sequence as for power-up initialization has to be applied before any other command may be issued (cf. Figure 4
and Figure 7).
Data Sheet
41
Rev. 1.3, 2004-04
10212003-BSPE-77OL