MB81N643289 Datasheet, PDF (26/64 Pages) Fujitsu Component Limited. – 8 x 256K x 32 BIT DOUBLE DATA RATE FCRAMTM

MB81N643289-50/-60 Preliminary (AE1E)
s ABSOLUTE MAXIMUM RATINGS (See WARNING)
Parameter
Voltage of VDD Supply Relative to VSS
Voltage at Any Pin Relative to VSS
Short Circuit Output Current
Power Dissipation
Storage Temperature
Symbol
VDD, VDDQ
VIN, VOUT
IOUT
PD
TSTG
Value
Unit
–0.5 to +3.6
V
–0.5 to +3.6
V
±50
mA
2.0
W
–55 to +125
°C
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,
temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
s RECOMMENDED OPERATING CONDITIONS
(Referenced to VSS)
Parameter
Notes Symbol
VDD
Supply Voltage
VDDQ
VSS, VSSQ
Input Reference Voltage
*3
VREF
Single Ended DC Input High Level
Single Ended DC Input Low Level
Single Ended AC Input High Level
*1
Single Ended AC Input Low Level
*2
Differential DC Level Input Voltage
Differential DC Level Differential Input Voltage
Differential AC Level Differential Input Voltage
Differential AC Level Input Cross Point Voltage
Differential Input Signal Offset Voltage
*4
Ambient Temperature
VIH(DC)
VIL(DC)
VIH(AC)
VIL(AC)
VIN(DC)
VSWING(DC)
VSWING(AC)
VX(AC)
VISO(AC)
TA
Min.
2.3
VDD
0
VDDQ/2 *98%
(1.15V min)
VREF + 0.25
–0.1
VREF + 0.35
–0.1
–0.1
0.50
0.70
VDDQ/2 – 0.2
VDDQ/2 – 0.2
0
Typ.
Max.
Unit
2.5
2.7
V
VDD
VDD
V
0
0
V
VDDQ/2
VDDQ/2 *102%
(1.35V max)
V
—
VDDQ + 0.1
V
—
VREF – 0.25 V
—
VDDQ + 0.1
V
—
VREF – 0.35 V
—
VDDQ + 0.1
V
—
VDDQ + 0.2
V
—
VDDQ + 0.2
V
VDDQ/2 VDDQ/2 + 0.2 V
VDDQ/2 VDDQ/2 + 0.2 V
—
70
°C
26