MB81N643289 Datasheet, PDF (1/64 Pages) Fujitsu Component Limited. – 8 x 256K x 32 BIT DOUBLE DATA RATE FCRAMTM

FUJITSU SEMICONDUCTOR
DATA SHEET
AE1E
MEMORY
CMOS
8 x 256K x 32 BIT
DOUBLE DATA RATE FCRAM^TM
MB81N643289-50/-60
CMOS 8-BANK x 262,144-WORD x 32 BIT
Fast Cycle Random Access Memory (FCRAM)
with Double Data Rate
s DESCRIPTION
The Fujitsu MB81N643289 is a CMOS Fast Cycle Random Access Memory (FCRAM) containing 67,108,864
memory cells accessible in an 32-bit format. The MB81N643289 features a fully synchronous operation referenced
to clock edge whereby all operations are synchronized at a clock input which enables high performance and
simple user interface coexistence. The MB81N643289 is designed to reduce the complexity of using a standard
dynamic RAM (DRAM) which requires many control signal timing constraints. The MB81N643289 uses Double
Data Rate (DDR) where data bandwidth is twice of fast speed compared with regular SDRAMs.
The MB81N643289 is designed using Fujitsu advanced FCRAM Core Technology.
The MB81N643289 is ideally suited for Digital Visual System, High Performance Graphic Adapters, Hardware
Accelerators, Buffers, and other applications where large memory density and high effective bandwidth are
required and where a simple interface is needed.
The MB81N643289 adopts new I/O interface circuitry, 2.5 V CMOS Source Termination I/O interface, which is
capable of extremely fast data transfer of quality under point to point bus environment.
s PRODUCT LINE
Parameter
Clock Frequency
CL = 3
CL = 2
Burst Mode Cycle Time
CL = 3
CL = 2
Random Address Cycle Time
DQS Access Time From Clock
Operating Current
Power Down Current
Notice : FCRAM is a trademark of Fujitsu Limited, Japan.
MB81N643289
-50
-60
200 MHz max
167 MHz max
133 MHz max
111 MHz max
2.5 ns min
3.0 ns min
3.75 ns min
4.5 ns min
30 ns min
36 ns min
0.1*tCK + 0.2 ns max
0.1*tCK + 0.2 ns max
450 mA max
385 mA max
35 mA max
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