MC908AB32CFUE Datasheet, PDF (71/392 Pages) Freescale Semiconductor, Inc – Microcontrollers

EEPROM
$FE1F
EEPROM Array ^Read:
Configuration Register Write:
(EEACR) _Reset:
CON3
CON2
CON1 EEPRTCT EEBP3 EEBP2 EEBP1
Contents of EENVR ($FE1C)
* Non-volatile EEPROM register; write by programming.
= Unimplemented
R = Reserved
Figure 5-1. EEPROM I/O Register Summary
EEBP0
5.4 Functional Description
The 512 bytes of EEPROM is located at $0800–$09FF, and can be
programmed or erased without an additional external high voltage
supply. The program and erase operations are enabled through the use
of an internal charge pump. For each byte of EEPROM, the write/erase
endurance is 10,000 cycles.
5.5 EEPROM Configuration
The 8-bit EEPROM non-volatile register (EENVR) and the 16-bit
EEPROM timebase divider non-volatile register (EEDIVNVR) contain
the default settings for the following EEPROM configurations:
• Security option
• Block protection
• EEPROM timebase reference
EENVR and EEDIVNVR are non-volatile, EEPROM registers. They are
programmed and erased in the same way as EEPROM bytes. The
contents of these registers are loaded into their respective volatile
registers during a MCU reset. The values in these read/write, volatile
registers define the EEPROM configurations.
For EENVR, the corresponding volatile register is the EEPROM array
configuration register (EEACR).
MC68HC908AB32 — Rev. 1.1
Freescale Semiconductor
EEPROM
Technical Data
71