MC908AB32CFUE Datasheet, PDF (385/392 Pages) Freescale Semiconductor, Inc – Microcontrollers

Electrical Specifications
23.13 FLASH Memory Characteristics
Characteristic
Symbol
Min
Max
Unit
FLASH program bus clock frequency
—
1
—
MHz
FLASH read bus clock frequency
f_Read(1)
32k 8.4M
Hz
FLASH page erase time
t_Erase(2)
1
—
ms
FLASH mass erase time
t_MErase(3)
4
—
ms
FLASH PGM/ERASE to HVEN set up time
t_nvs
10
—
µs
FLASH high-voltage hold time
t_nvh
5
—
µs
FLASH high-voltage hold time (mass erase)
t_nvhl
100
—
µs
FLASH program hold time
t_pgs
5
—
µs
FLASH program time
t_PROG
30
40
µs
FLASH return to read time
t_rcv(4)
1
—
µs
FLASH cumulative program hv period
FLASH row erase endurance⁽⁶⁾
FLASH row program endurance⁽⁷⁾
FLASH data retention time⁽⁸⁾
t_HV(5)
—
—
—
—
4
10,000 —
10,000 —
10
—
ms
Cycles
Cycles
Years
Notes:
1. f_Read is defined as the frequency range for which the FLASH memory can be read.
2. If the page erase time is longer than t_Erase (Min), there is no erase-disturb, but it reduces the endurance of the
FLASH memory.
3. If the mass erase time is longer than t_MErase (Min), there is no erase-disturb, but it reduces the endurance of
the FLASH memory.
4. t_rcv is defined as the time it needs before the FLASH can be read after turning off the high voltage charge pump,
by clearing HVEN to logic 0.
5. t_HV is defined as the cumulative high voltage programming time to the same row before next erase.
t_HV must satisfy this condition: t_nvs + t_nvh + t_pgs + (t_PROG × 64) ≤ t_HV max.
6. The minimum row endurance value specifies each row of the FLASH memory is guaranteed to work for at least
this many erase / program cycles.
7. The minimum row endurance value specifies each row of the FLASH memory is guaranteed to work for at least
this many erase / program cycles.
8. The FLASH is guaranteed to retain data over the entire operating temperature range for at least the minimum
time specified.
MC68HC908AB32 — Rev. 1.1
Freescale Semiconductor
Electrical Specifications
Technical Data
385