MC9S08GT16A Datasheet, PDF (50/300 Pages) Freescale Semiconductor, Inc – Microcontrollers

Memory
NOTE
Do not program any byte in the FLASH more than once after a successful
erase operation. Reprogramming bits in a byte which is already
programmed is not allowed without first erasing the page in which the byte
resides or mass erasing the entire FLASH memory. Programming without
first erasing may disturb data stored in the FLASH.
2. Write the command code for the desired command to FCMD. The five valid commands are blank
check (0x05), byte program (0x20), burst program (0x25), page erase (0x40), and mass erase
(0x41). The command code is latched into the command buffer.
3. Write a 1 to the FCBEF bit in FSTAT to clear FCBEF and launch the command (including its
address and data information).
A partial command sequence can be aborted manually by writing a 0 to FCBEF any time after the write to
the memory array and before writing the 1 that clears FCBEF and launches the complete command.
Aborting a command in this way sets the FACCERR access error flag which must be cleared before
starting a new command.
A strictly monitored procedure must be adhered to, or the command will not be accepted. This minimizes
the possibility of any unintended change to the FLASH memory contents. The command complete flag
(FCCF) indicates when a command is complete. The command sequence must be completed by clearing
FCBEF to launch the command. Figure 4-2 is a flowchart for executing all of the commands except for
burst programming. The FCDIV register must be initialized before using any FLASH commands. This
must be done only once following a reset.
MC9S08GT16A/GT8A Data Sheet, Rev. 1
50
Freescale Semiconductor