MC9S08GT16A Datasheet, PDF (262/300 Pages) Freescale Semiconductor, Inc – Microcontrollers

Electrical Characteristics
A.5 Electrostatic Discharge (ESD) Protection Characteristics
Although damage from electrostatic discharge (ESD) is much less common on these devices than on early
CMOS circuits, normal handling precautions should be used to avoid exposure to static discharge.
Qualification tests are performed to ensure that these devices can withstand exposure to reasonable levels
of static without suffering any permanent damage.
All ESD testing is in conformity with AEC-Q100 Stress Test Qualification for Automotive Grade
Integrated Circuits. During the device qualification ESD stresses were performed for the Human Body
Model (HBM), the Machine Model (MM) and the Charge Device Model (CDM).
A device is defined as a failure if after exposure to ESD pulses the device no longer meets the device
specification. Complete DC parametric and functional testing is performed per the applicable device
specification at room temperature followed by hot temperature, unless specified otherwise in the device
specification
Table A-4. ESD and Latch-up Test Conditions
Model
Human Body
Description
Series Resistance
Symbol
R1
Storage Capacitance
C
Number of Pulse per pin
—
Machine
Series Resistance
R1
Storage Capacitance
C
Number of Pulse per pin
—
Charge Device Series Resistance
R1
Model
Storage Capacitance
C
Number of Pulse per pin
—
Latch-Up
Minimum input voltage limit
Maximum input voltage limit
Value
1500
100
3
0
200
3
–2.5
7.5
Unit
Ω
pF
Ω
pF
Ω
pF
V
V
A.6 DC Characteristics
This section includes information about power supply requirements, I/O pin characteristics, and power
supply current in various operating modes.
Table A-5. MCU Operating Conditions
Characteristic
Supply Voltage
Temperature
Min
Typ
Max
Unit
1.8
—
3.6
V
°C
M
–40
—
125
C
–40
—
85
MC9S08GT16A/GT8A Data Sheet, Rev. 1
262
Freescale Semiconductor