MC9S08GT16A Datasheet, PDF (283/300 Pages) Freescale Semiconductor, Inc – Microcontrollers

Electrical Characteristics
A.11 FLASH Specifications
This section provides details about program/erase times and program-erase endurance for the FLASH
memory.
Program and erase operations do not require any special power sources other than the normal V_DD supply.
For more detailed information about program/erase operations, see Chapter 4, “Memory.”
Table A-15. FLASH Characteristics
Characteristic
Symbol
Min
Typical
Max
Unit
Supply voltage for program/erase
T ≤ 85°C
T > 85°C
V_prog/erase
1.8
2.1
3.6
V
3.6
V
Supply voltage for read operation
0 < f_Bus < 8 MHz
0 < f_Bus < 20 MHz
Internal FCLK frequency¹
V_Read
f_FCLK
1.8
2.08
150
3.6
V
3.6
200
kHz
Internal FCLK period (1/FCLK)
t_Fcyc
5
6.67
µs
Byte program time (random location)⁽²⁾
t_prog
9
t_Fcyc
Byte program time (burst mode)⁽²⁾
t_Burst
4
t_Fcyc
Page erase time²
t_Page
4000
t_Fcyc
Mass erase time⁽²⁾
t_Mass
20,000
t_Fcyc
Byte program current³
RI_DDBP
—
4
—
mA
Page erase current³
RI_DDPE
—
6
—
mA
Program/erase endurance⁴
T_L to T_H = –40°C to +125°C
T = 25°C
10,000
—
100,000
—
cycles
Data retention⁵
t_{D_ret}
15
100
—
years
1 _{The frequency of this clock is controlled by a software setting.}
2 _{These values are hardware state machine controlled. User code does not need to count cycles. This information}
supplied for calculating approximate time to program and erase.
3 _{The program and erase currents are additional to the standard run IDD. These values were measured at room}
temperatures with V_DD = 3.0 V, bus frequency = 4.0 MHz.
4 _{Typical endurance for FLASH was evaluated for this product family on the 9S12Dx64. For additional}
information on how Freescale Semiconductor defines typical endurance, please refer to Engineering Bulletin
EB619/D, Typical Endurance for Nonvolatile Memory.
5 _{Typical data retention values are based on intrinsic capability of the technology measured at high temperature}
and de-rated to 25°C using the Arrhenius equation. For additional information on how Freescale Semiconductor
defines typical data retention, please refer to Engineering Bulletin EB618/D, Typical Data Retention for
Nonvolatile Memory.
MC9S08GT16A/GT8A Data Sheet, Rev. 1
Freescale Semiconductor
283