MC9S08GT16A Datasheet, PDF (48/300 Pages) Freescale Semiconductor, Inc – Microcontrollers

Memory
only way to disengage security is by mass erasing the FLASH if needed (normally through the background
debug interface) and verifying that FLASH is blank. To avoid returning to secure mode after the next reset,
program the security bits (SEC01:SEC00) to the unsecured state (1:0).
4.3 RAM
The MC9S08GT16A/GT8A includes static RAM. The locations in RAM below 0x0100 can be accessed
using the more efficient direct addressing mode, and any single bit in this area can be accessed with the bit
manipulation instructions (BCLR, BSET, BRCLR, and BRSET). Locating the most frequently accessed
program variables in this area of RAM is preferred.
The RAM retains data when the MCU is in low-power wait, stop2, or stop3 mode. At power-on or after
wakeup from stop1, the contents of RAM are uninitialized. RAM data is unaffected by any reset provided
that the supply voltage does not drop below the minimum value for RAM retention.
For compatibility with older M68HC05 MCUs, the HCS08 resets the stack pointer to 0x00FF. In the
MC9S08GT16A/GT8A, it is usually best to re-initialize the stack pointer to the top of the RAM so the
direct page RAM can be used for frequently accessed RAM variables and bit-addressable program
variables. Include the following 2-instruction sequence in your reset initialization routine (where RamLast
is equated to the highest address of the RAM in the Freescale-provided equate file).
LDHX
TXS
#RamLast+1
;point one past RAM
;SP<-(H:X-1)
When security is enabled, the RAM is considered a secure memory resource and is not accessible through
BDM or through code executing from non-secure memory. See Section 4.5, “Security,” for a detailed
description of the security feature.
4.4 FLASH
The FLASH memory is intended primarily for program storage. In-circuit programming allows the
operating program to be loaded into the FLASH memory after final assembly of the application product.
It is possible to program the entire array through the single-wire background debug interface. Because no
special voltages are needed for FLASH erase and programming operations, in-application programming
is also possible through other software-controlled communication paths. For a more detailed discussion of
in-circuit and in-application programming, refer to the HCS08 Family Reference Manual, Volume I,
Freescale Semiconductor document order number HCS08RMV1/D.
4.4.1 Features
Features of the FLASH memory include:
• FLASH Size
— MC9S08GT16A — 16384 bytes (32 pages of 512 bytes each)
— MC9S08GT8A — 8192 bytes (16 pages of 512 bytes each)
• Single power supply program and erase down to 1.8 V
• Command interface for fast program and erase operation
• Up to 100,000 program/erase cycles at typical voltage and temperature
MC9S08GT16A/GT8A Data Sheet, Rev. 1
48
Freescale Semiconductor