I.MX27L_11 Datasheet, PDF (43/152 Pages) Freescale Semiconductor, Inc – Multimedia Applications Processor Multiple clock and power domains

Electrical Characteristics
Table 11. Current Consumption (continued)
ID
Parameter
Conditions
Symbol Typical Max Units
3
Sleep Current • QV_DD = 1.2 V.
• NV_DD = 1.75 V.
• Both PLLs are off.
• FPM is off.
• ARM well bias is enabled.
• 32 kHz oscillator is on.
• 26MHz oscillator is off.
• All the modules are off.
• T_A = 25° C.
Idd_SLEEP 0.9
3.5 mA
4
Power Gate • NV_DD13 is on. See Table 7 for specific values. Idd_PG
50
TBD µA
• RTC_VDD, OSC32_VDD are on. See Table 7 for
specific values.
• All other V_DD = 0 V
• T_A = 25° C.
4.1.3 Test Conditions and Recommended Settings
Unless specified, AC timing parameters are specified for 15 pF loading on i.MX27/iMX27L pads. Drive
strength has been kept at default/reset values for testing. EMI timing has been verified with high drive
strength setting and 25 pF loads. SDHC timing has also been verified with high drive strength setting.
Unless otherwise noted, AC/DC parameters are guaranteed at operating conditions shown in Table 7.
4.2 Module-Level Electrical Specifications
This section contains the i.MX27/iMX27L electrical information including timing specifications, arranged
in alphabetical order by module name.
4.2.1 Pads IO (PADIO) Electricals
4.2.1.1 DC Electrical Characteristics
The over-operating characteristics appear in Table 12 for GPIO pads and Table 13 for DDR (Double Data
Rate) pads (unless otherwise noted).
Table 12. GPIO Pads DC Electrical Parameters
Parameter
High-level output voltage
Low-level output voltage
Symbol
V_OH
V_OL
Test Conditions
Min
Typical
Max
I_OH = -1 mA
N_VDD -0.15
—
I_OH = specified Drive 0.8*N_VDD
—
I_OL = 1 mA
—
—
I_OL = specified Drive
—
—
—
—
0.15
0.2*N_VDD
Units
V
V
V
V
i.MX27 and i.MX27L Data Sheet, Rev. 1.7
Freescale Semiconductor
43