MC908JL8CDWE Datasheet, PDF (36/212 Pages) Freescale Semiconductor, Inc – Microcontrollers

Memory
8. Wait for time, t_prog (30µs).
9. Repeat steps 7 and 8 until all bytes within the row are programmed.
10. Clear the PGM bit.
11. Wait for time, t_nvh (5µs).
12. Clear the HVEN bit.
13. After time, t_rcv (1µs), the memory can be accessed in read mode again.
This program sequence is repeated throughout the memory until all data is programmed.
NOTE
The time between each FLASH address change (step 7 to step 7), or the
time between the last FLASH addressed programmed to clearing the PGM
bit (step 7 to step 10), must not exceed the maximum programming time,
t_prog max.
NOTE
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order shown, other unrelated operations may
occur between the steps.
MC68HC908JL8/JK8 • MC68HC08JL8/JK8 • MC68HC908KL8 Data Sheet, Rev. 3.1
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Freescale Semiconductor