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PD488588FF Datasheet, PDF (69/79 Pages) Elpida Memory – 288M bits Direct Rambus DRAM for High Performance Solution | |||
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µPD488588FF-C80-40
RSL Pin Parasitics
Symbol
Parameter and Conditions - RSL pins
MIN.
MAX.
Unit
LI
RSL effective input inductance
â
4.0
nH
L12
Mutual inductance between any DQA or DQB RSL signals.
â
0.2
nH
Mutual inductance between any ROW or COL RSL signals.
â
0.6
nH
âLI
Difference in LI value between any RSL pins of a single device.
â
1.8
nH
CI
RSL effective input capacitance Note
800 MHz
2.0
2.4
pF
C12
Mutual capacitance between any RSL signals.
â
0.1
pF
âCI
Difference in CI value between any RSL pins of a single device.
â
0.06
pF
RI
RSL effective input resistance
4
15
â¦
Note This value is a combination of the device IO circuitry and package capacitances.
CMOS Pin Parasitics
Symbol
Parameter and Conditions - CMOS pins
MIN.
MAX.
Unit
LI,CMOS
CI,CMOS
CI,CMOS,SIO
CMOS effective input inductance
CMOS effective input capacitance (SCK,CMD) Note
CMOS effective input capacitance (SIO1,SIO0) Note
â
8.0
nH
1.7
2.1
pF
â
7.0
pF
Note This value is a combination of the device IO circuitry and package capacitances.
Data Sheet E0251N20 (Ver. 2.0)
69
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