PD488588FF Datasheet, PDF (67/79 Pages) Elpida Memory – 288M bits Direct Rambus DRAM for High Performance Solution

µPD488588FF-C80-40
37. Absolute Maximum Ratings
Absolute Maximum Ratings
Symbol
Parameter
MIN.
MAX.
Unit
VI,ABS
Voltage applied to any RSL or CMOS pin with respect to GND
–0.3
VDD +0.3
V
VDD,ABS ,VDDa,ABS Voltage on VDD and VDDa with respect to GND
–0.5
VDD +1.0
V
TSTORE
Storage temperature
–50
+100
°C
Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
38. IDD - Supply Current Profile
IDD - Supply Current Profile
IDD value
RDRAM blocks consuming power
@ t Note 1
CYCLE
MIN.
MAX.
Unit
IDD,PDN
Self-refresh only for INIT.LSR=0

IDD,NAP
T/RCLK-Nap

IDD,STBY
T/RCLK,ROW-demux
2.50 ns

IDD,ATTN
T/RCLK, ROW-demux, COL-demux
2.50 ns

IDD,ATTN-W
T/RCLK, ROW-demux, COL-demux,
2.50 ns

DQ-demux, 1•WR-SenseAmp, 4•ACT-Bank
IDD,ATTN-R
T/RCLK, ROW-demux, COL-demux,
2.50 ns

DQ-mux, 1•RD-SenseAmp, 4•ACT-Bank ^{Note 2}
6.0
mA
4.2
mA
90
mA
135
mA
765
mA
705
mA
Notes 1. The CMOS interface consumes power in all power states.
2. This does not include the IOL sink current. The RDRAM dissipates IOL•VOL in each output driver when a logic
one is driven.
Data Sheet E0251N20 (Ver. 2.0)
67