BCM43907 Datasheet, PDF (75/128 Pages) Cypress Semiconductor – WICED™ IEEE 802.11 a/b/g/n SoC with an Embedded Applications Processor

BCM43907 Preliminary Data Sheet
Electrical Characteristics
Section 13: Electrical Characteristics
Note: Values in this data sheet are design goals and are subject to change based on the results of
device characterization.
Absolute Maximum Ratings
Caution! The absolute maximum ratings in Table 15 indicate levels where permanent damage to the
device can occur, even if these limits are exceeded for only a brief duration. Functional operation is
not guaranteed under these conditions. Operation at absolute maximum conditions for extended
periods can adversely affect long-term reliability of the device.
Table 15: Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
DC supply for VBAT and PA driver supply ^a
VBAT
–0.5 to +5.5
V
DC supply voltage for digital I/O
VDDIO
–0.5 to 3.9
V
DC supply voltage for I²S I/O
VDDIO_I2S
–0.5 to 3.9
V
DC supply voltage for RF switch I/O
VDDIO_RF
–0.5 to 3.9
V
DC supply voltage for Ethernet I/O
VDDIO_RMII
–0.5 to 3.9
V
DC supply voltage for SDIO I/O
VDDIO_SD
–0.5 to 3.9
V
DC input supply voltage for CLDO, LNLDO, and BBPLL –
LDO^b
–0.5 to 1.575 V
3.3V DC supply for USB
USB2_AVDD33 –0.5 to 3.9
V
USB2_AVDD33LDO
USB2_AVDD33IO
3.3V DC supply voltage for RF analog^c
VDD3P3RF
–0.5 to 3.6
V
1.35V DC supply voltage for RF analog^d
VDD1P35RF
–0.5 to 1.5
V
1.2V DC supply voltage for RF analog^e
VDD1P2RF
–0.5 to 1.26
V
1.2V DC supply voltage for analog circuits^f
VDD1P2A
–0.5 to 1.26
V
DC supply voltage for the core^g
VDDC
–0.5 to 1.32
V
DC supply voltage for OTP memory
OTP_VDD3P3
–0.5 to 3.9
V
Maximum undershoot voltage for I/O
V_undershoot
–0.5
V
Maximum junction temperature
T_j
125
°C
a. For the SR_VDDBAT5V and LDO_VDDBAT5V supplies.
b. For the LDO_VDD1P5 and WRF_XTAL_VDD1P35 supplies.
c. For the WRF_SYNTH_VDD3P3, WRF_PA_VDD3P3, and WRF_TXMIX_VDD supplies.
Broadcom^®
March 12, 2016 • 43907-DS104-R
BROADCOM CONFIDENTIAL
Page 74