W968D6DA Datasheet, PDF (69/75 Pages) Winbond – Low-power features

W968D6DA
256Mb Async./Page,Syn./Burst CellularRAM
10.2.28 Burst READ Followed By Asynchronous WRITE (WE# - Controlled)
CLK
V IH
V IL
A [ max : 0 ]
V IH
V IL
ADV #
V IH
V IL
CE #
V IH
V IL
OE #
V IH
V IL
WE # ^{V IH}
V IL
LB # / UB #
V IH
V IL
WAIT
V OH
V OL
DQ [ 15:0 ] ^{V OH}
V OL
tSP tHD
Vaild
Address
tSP tHD
tCSP
tSP tHD
tSP
tCEW
High - Z
High - Z
tCLK
tHD
tCBPH
tHZ
*2
tBOE ^tOHZ
tOLZ
tWC
Valid Address
tAW
tWR
tCW
tAS
tWP
tWPH
tBW
tHD
tKHTL
tCEW
High - Z
tACLK tKOH
Valid
V IH
Output
V IL
tHZ
tDW tDH
Valid
Output
READ Burst Identified
(WE# = HIGH)
Don‟t Care
Undefined
Note : 1. Non-default BCR settings for burst READ followed by asynchronous WE#-controlled WRITE : Fixed or variable latency;
latency code 2(3 clocks); WAIT active LOW; WAIT asserted during delay.
2. When transitioning between asynchronous and variable-latency burst operations, CE# must go HIGH. CE# can stay
LOW when transitioning from fixed-latency burst READs. Asynchronous operation begins at the falling edge of ADV#.A
refresh opportunity must be provided every tCEM. A refresh opportunity is satisfied by either of the following two
conditions: a) clocked CE# HIGH, or b) CE# HIGH for longer than 15ns.
- 69 -
Publication Release Date : June 27, 2013
Revision : A01-003