W968D6DA Datasheet, PDF (67/75 Pages) Winbond – Low-power features

W968D6DA
256Mb Async./Page,Syn./Burst CellularRAM
10.2.26 Asynchronous WRITE Followed by Burst READ
CLK
V IH
V IL
A [ max : 0 ]
V IH
V IL
ADV #
V IH
V IL
LB # / UB # ^{V IH}
V IL
CE #
V IH
V IL
OE #
V IH
V IL
WE # ^{V IH}
V IL
V OH
WAIT _{V OL}
DQ [ 15:0 ] V IH
IN / OUT ^{V IL}
tCLK
tWC tWC
Valid
Address
tAVS
Valid
Address
tAW
tAVH
tVP ^tVS
tBW
tCVS
tCW
tSP tHD
Valid
Address
tWR tSP tHD
tSP
tCBPH _tCSP
tAS
*2
tWP
tWC
tWPH
tAS
tSP tHD
tCEM
High - Z _{Data Data}
tDH tDW
V OH High - Z
V OL
tHD
tOHZ
tBOE
High - Z
tKOH
tACLK
Valid Valid Valid Valid
Output Output Output Output
Don‟t Care
Undefined
Note : 1. Non-default BCR settings for asynchronous WRITE followed by burst READ: Fixed or variable latency; latency code 2(3
clocks); WAIT active LOW; WAIT asserted during delay.
2. When transitioning between asynchronous and variable-latency burst operations, CE# must go HIGH. CE# can stay
LOW when transitioning to fixed-latency burst READs. A refresh opportunity must be provided every tCEM. A refresh
opportunity is satisfied by either of the following two conditions: a) clocked CE# HIGH, or b) CE# HIGH for longer than
15ns.
- 67 -
Publication Release Date : June 27, 2013
Revision : A01-003