W968D6DA Datasheet, PDF (39/75 Pages) Winbond – Low-power features

W968D6DA
9.3 Deep Power-Down Specifications
256Mb Async./Page,Syn./Burst CellularRAM
Description
Conditions
Symbol Typical Unit
Deep Power-Down
VIN = VCCQ or 0V;
VCC, VCCQ = 1.95V; +85°C
IZZ
Note: Typical (TYP) IZZ value applies across all operating temperatures and voltages.
25
μA
9.4 Partial Array Self Refresh Standby Current
Description
Conditions
Symbol
Array
Partition
Max
Unit
Full
Partial-array
refresh
Standby current
VIN = VCCQ or 0V,
CE# = VCCQ
IPAR
Standard power
(no designation)
1/2
1/4
1/8
0
400
330
300
uA
280
250
Note : IPAR (MAX) values measured at 85°C. IPAR might be slightly higher for up to 500 ms after changes to the PAR array
partition or when entering standby mode.
9.5 Capacitance
Description
Conditions
Symbol Min
Note:
Input Capacitance
Input/Output Capacitance
(DQ)
TC = +25ºC; f = 1 MHz;
VIN = 0V
CIN
CIO
2.0
3.5
These parameters are verified in device characterization and are not 100% tested.
Max
6
6
Unit
pF
pF
Note
1
1
9.6 AC Input-Output Reference Waveform
VccQ
Intput 1
VccQ /2 ²
Test Points
VccQ/2 ³ Output
VssQ
Note: 1. AC test inputs are driven at VCCQ for a logic 1 and VSSQ for a logic 0. Input rise and fall times (10% to 90%) <1.6ns.
2. Input timing begins at VCCQ/2.
3. Output timing ends at VCCQ/2.
9.7 AC Output Load Circuit
Test Point
DUT
50 Ohm
30pF
VCCQ / 2
Note: All tests are performed with the outputs configured for default setting of half drive strength (BCR[5:4] = 01b).
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Publication Release Date : June 27, 2013
Revision : A01-003