W968D6DA Datasheet, PDF (38/75 Pages) Winbond – Low-power features

W968D6DA
256Mb Async./Page,Syn./Burst CellularRAM
9.2 Electrical Characteristics and Operating Conditions
Description
Conditions
Symbol Typical
Min
Max Unit Notes
Supply voltage
I/O supply voltage
Input high voltage
Input low voltage
Output high
voltage
IOH=–0.2mA
Output low voltage IOL=+0.2mA
Input leakage
current
VIN=0toVCCQ
Output leakage OE#=VIH or chip
current
disabled
VCC
VCCQ
VIH
VIL
VOH
VOL
ILI
ILO
1.7
1.95
V
1.7
1.95
V
VCCQ–0.4 VCCQ+0.2 V
1
–0.20
0.4
V
2
0.8xVCCQ
V
3
0.2xVCCQ V
3
1
μA
1
μA
Operating Current
Conditions
Symbol
Typical
Max Unit Notes
Asynchronous
random
READ/WRITE
VIN = VCCQ or 0V
chip enabled, IOUT=0
ICC1 tRC/tWC=70ns
-
Asynchronous
PAGE READ
VIN = VCCQ or 0V,
Chip enabled,
IOUT=0
ICC1P tRC=70ns
25
mA 4
18
mA 4
Initial access,
VIN = VCCQ or 0V,
133MHz
-
burst
Chip enabled,
ICC2
READ/WRITE
IOUT=0
104MHz
-
40
mA 4
35
Continuous burst
READ
VIN = VCCQ or 0V,
Chip enabled,
IOUT=0
ICC3R
133MHz
104MHz
-
-
35
mA 4
30
Continuous burst
WRITE
VIN = VCCQ or 0V,
Chip enabled,
IOUT=0
ICC3W
133MHz
104MHz
-
-
40
mA 4
35
Standby Current
VIN = VCCQ or 0V,
CE# = VCCQ
ISB
Standard
-
400
uA 5,6
Note: 1. Input signals may overshoot to VCCQ + 1.0V for periods less than 2ns during transitions.
2. Input signals may undershoot to VSS – 1.0V for periods less than 2ns during transitions.
3. BCR[5:4] = 01b (default setting of one-half drive strength).
4. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add the current required to drive
output capacitance expected in the actual system.
5. ISB (max) values measured with PAR set to FULL ARRAY and at +85°C. In order to achieve low standby current, all inputs must be driven
to either VCCQ or VSS. ISB might be slightly higher for up to 500ms after power-up, or when entering standby mode.
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Publication Release Date : June 27, 2013
Revision : A01-003