W968D6DA Datasheet, PDF (25/75 Pages) Winbond – Low-power features

8.4.2.2 Read Configuration Register
ADDRESS
READ
Address
( MAX )
CE #
W968D6DA
256Mb Async./Page,Syn./Burst CellularRAM
READ
Address
( MAX )
WRITE
Address
( MAX )
READ
Address
( MAX )
OE #
WE #
LB # / UB #
DATA
XXXXh
XXXXh
RCR : 0000h
BCR : 0001h
DIDR : 0002h
CR Value
Out
Don‟t Care
8.4.3 Bus Configuration Register
The BCR defines how the CellularRAM device interacts with the system memory bus. Page mode operation is
enabled by a bit contained in the RCR. Diagram describes the control bits in the BCR. At power-up, the BCR is set to
9D1Fh. The BCR is accessed with CRE HIGH and A[19:18] = 10b, or through the register access software sequence
with DQ = 0001h on the third cycle.
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Publication Release Date : June 27, 2013
Revision : A01-003